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document number: 94417 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 02-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 scr/scr and scr/diode (magn-a-pak power modules), 170 a/250 a vsk.170pbf, vsk.250pbf series vishay semiconductors features ? high voltage ? electrically isolated base plate ? 3500 v rms isolating voltage ? industrial standard package ? simplified mechanical designs, rapid assembly ? high surge capability ? large creepage distances ? ul approved file e78996 ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level description this new vsk series of ma gn-a-pak modules uses high voltage power thyristor/thyristor and thyristor/diode in seven basic configurations. the semiconductors are electrically isolated from the metal base, allowing common heatsinks and compact assemblie s to be built. they can be interconnected to form single phase or three phase bridges or as ac-switches when modules are connected in anti-parallel mode. these modules are intended for general purpose applications such as battery chargers, welders, motor drives, ups, etc. product summary i t(av) 170 a/250 a magn-a-pak major ratings and characteristics symbol characteristics vsk.170.. vsk.250.. units i t(av) 85 c 170 250 a i t(rms) 377 555 i tsm 50 hz 5100 8500 60 hz 5350 8900 i 2 t 50 hz 131 361 ka 2 s 60 hz 119 330 i 2 ? t 1310 3610 ka 2 ? s v drm /v rrm up to 1600 up to 2000 v t j range - 40 to 130 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94417 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 02-jul-10 vsk.170pbf, vsk.250pbf series vishay semiconductors scr/scr and scr/diode (magn-a-pak power modules), 170 a/250 a electrical specifications voltage ratings type number voltage code v rrm /v drm , maximum repetitive peak reverse and off-state blocking voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm /i drm at 130 c maximum ma vsk.170- 04 400 500 50 08 800 900 10 1000 1100 12 1200 1300 14 1400 1500 16 1600 1700 vsk.250- 04 400 500 50 08 800 900 10 1000 1100 12 1200 1300 14 1400 1500 16 1600 1700 18 1800 1900 60 20 2000 2100 on-state conduction parameter symbol test cond itions vsk.170 vsk.250 units maximum average on-state current at case temperature i t(av) 180 conduction, half sine wave 170 250 a 85 85 c maximum rms on-state current i t(rms) as ac switch 377 555 a maximum peak, one-cycle on-state non-repetitive, surge current i tsm t = 10 ms no voltage reapplied sinusoidal half wave, initial t j = t j maximum 5100 8500 t = 8.3 ms 5350 8900 t = 10 ms 100 % v rrm reapplied 4300 7150 t = 8.3 ms 4500 7500 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 131 361 ka 2 s t = 8.3 ms 119 330 t = 10 ms 100 % v rrm reapplied 92.5 255 t = 8.3 ms 84.4 233 maximum i 2 ? t for fusing i 2 ? t t = 0.1 ms to 10 ms, no voltage reapplied 1310 3610 ka 2 ? s low level value or threshold voltage v t(to)1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 0.89 0.97 v high level value of threshold voltage v t(to)2 (i > ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 1.12 1.00 low level value on-state slope resistance r t1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 1.34 0.60 m ? high level value on-state slope resistance r t2 (i > ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 0.96 0.57 maximum on-state voltage drop v tm i tm = ? x i t(av) , t j = t j maximum, 180 conduction, average power = v t(to) x i t(av) + r f x (i t(rms) ) 2 1.60 1.44 v maximum holding current i h anode supply = 12 v, initial i t = 30 a, t j = 25 c 500 500 ma maximum latching current i l anode supply = 12 v, resistive load = 1 ? , gate pulse: 10 v, 100 s, t j = 25 c 1000 1000
document number: 94417 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 02-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 vsk.170pbf, vsk.250pbf series scr/scr and scr/diode (magn-a-pak power modules), 170 a/250 a vishay semiconductors switching parameter symbol test conditions vsk.170 vsk.250 units typical delay time t d t j = 25 c, gate current = 1 a di g /dt = 1 a/s v d = 0.67 % v drm 1.0 s typical rise time t r 2.0 typical turn-off time t q i tm = 300 a; di/dt = 15 a/s; t j = t j maximum; v r = 50 v; dv/dt = 20 v/s; gate 0 v, 100 ? 50 to 150 blocking parameter symbol test conditions vsk.170 vsk.250 units maximum peak reverse and off-state leakage current i rrm, i drm t j = t j maximum 50 60 ma rms insulation voltage v ins 50 hz, circuit to ba se, all terminals shorted, 25 c, 1 s 3000 v critical rate of rise of off-state voltage dv/dt t j = t j maximum, exponential to 67 % rated v drm 1000 v/s triggering parameter symbol test conditions vsk.170 vsk.250 units maximum peak gate power p gm t p ? 5 ms, t j = t j maximum 10.0 w maximum average gate power p g(av) f = 50 hz, t j = t j maximum 2.0 maximum peak gate current + i gm t p ? 5 ms, t j = t j maximum 3.0 a maximum peak negative gate voltage - v gt t p ? 5 ms, t j = t j maximum 5.0 v maximum required dc ga te voltage to trigger v gt t j = - 40 c anode supply = 12 v, resistive load; ra = 1 ? 4.0 t j = 25 c 3.0 t j = t j maximum 2.0 maximum required dc ga te current to trigger i gt t j = - 40 c anode supply = 12 v, resistive load; ra = 1 ? 350 ma t j = 25 c 200 t j = t j maximum 100 maximum gate voltage th at will not trigger v gd t j = t j maximum, rated v drm applied 0.25 v maximum gate current that willnot trigger i gd t j = t j maximum, rated v drm applied 10.0 ma maximum rate of rise of turned-on current di/dt t j = t j maximum, i tm = 400 a, rated v drm applied 500 a/s thermal and mechanical specifications parameter symbol test conditions vsk.170 vsk.250 units junction operating and storage temperature range t j , t stg - 40 to 130 c maximum thermal resistance, junction to ca se per junction r thjc dc operation 0.17 0.125 k/w typical thermal resistance, case to heatsink per module r thcs mounting surface flat, smooth and greased 0.02 0.02 mounting torque 10 % map to heatsink a mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the compound. 4 to 6 nm busbar to map approximate weight 500 g 17.8 oz. case style magn-a-pak
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94417 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 02-jul-10 vsk.170pbf, vsk.250pbf series vishay semiconductors scr/scr and scr/diode (magn-a-pak power modules), 170 a/250 a note ? table shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics fig. 3 - on-state po wer loss characteristics fig. 4 - on-state po wer loss characteristics ? r conduction per junction devices sinusoidal conduction at t j maximum rectangular conduction at t j maximum units 180 120 90 60 30 180 120 90 60 30 vsk.170- 0.009 0.010 0.010 0.020 0.032 0.007 0.011 0.015 0.020 0.033 k/w vsk.250- 0.009 0.010 0.014 0.020 0.032 0.007 0.011 0.015 0.020 0.033 60 70 80 90 100 110 120 130 0 40 80 120 160 200 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction angle vsk.170.. series r thjc (dc) = 0.17 k/w 60 70 80 90 100 110 120 130 0 50 100 150 200 250 3 00 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction period vsk.170.. series r (dc) = 0.17 k/w thjc 0 50 100 150 200 250 300 040801201602 00 rms limit conduction angle maximum average on-state power loss (w ) average on-state current (a) 180 120 90 60 30 vsk.170.. series per junction t j = 125c 0 50 100 150 200 250 300 350 0 50 100 150 200 250 3 00 dc 180 120 90 60 30 rms limit conduction period maximum average on-state power loss (w ) average on-state current (a) vsk.170.. series per junction t j = 125c
document number: 94417 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 02-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 vsk.170pbf, vsk.250pbf series scr/scr and scr/diode (magn-a-pak power modules), 170 a/250 a vishay semiconductors fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current fig. 7 - on-state power loss characteristics fig. 8 - on-state power loss characteristics 2000 2500 3000 3500 4000 4500 5000 110100 number of equal amplitude half cycle current pulses (n) at any rated load condition and with rated v rrm applied following surge. peak half sine wave on-state current (a) vsk.170.. series per junction initial t j = 130c @ 60 hz 0.0083 s @ 50 hz 0.0100 s 2000 2500 3000 3500 4000 4500 5000 0.01 0.1 1 peak half sine wave on-state current (a) pulse train duration (s) maximum non repetitive surge curren t versus pulse train duration. control of conduction may not be maintained . initial t j = 130c no voltage reapplied rated v rrm reapplied vsk.170.. series per junction 020406080100120 0 . 3 5 k /w 0 . 3 k / w 0 . 2 5 k / w 0 . 2 k / w 0 . 0 8k / w 0. 1 2 k / w 0 . 1 6 k / w maximum allowable ambient temperature (c) r = 0 . 0 4 k / w - d e l t a r t h s a 0 50 100 150 200 250 300 350 400 0 50 100 150 200 250 300 350 400 180 120 90 60 30 maximum total on-state power loss (w) total rms output current (a) conduction angle vsk.170.. series per module t j = 130c 0 20406080100120 maximum allowable ambient temperature (c) r = 0 . 0 2 k / w - d e l t a r 0 . 0 4 k / w t h s a 0 . 0 6 k / w 0 . 0 8 k / w 0 . 1 k / w 0 .1 2 k / w 0 . 1 6 k / w 0 . 2 k / w 0 . 2 5 k / w 0 . 3 5 k / w 0 100 200 300 400 500 600 700 800 900 1000 0 50 100 150 200 250 300 350 total output current (a) maximum total power loss (w) 180 (sine) 180 (rect) 2 x vsk.170.. series single phase bridge connected t j = 130c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94417 6 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 02-jul-10 vsk.170pbf, vsk.250pbf series vishay semiconductors scr/scr and scr/diode (magn-a-pak power modules), 170 a/250 a fig. 9 - on-state po wer loss characteristics fig. 10 - current ratings characteristics fig. 11 - current ratings characteristics fig. 12 - on-state powe r loss characteristics fig. 13 - on-state powe r loss characteristics 0 20406080100120 maximum allowable ambient temperature (c) 0 . 2 5 k / w 0 . 1 6 k / w 0 . 1 2 k / w 0 . 1 k / w 0 . 0 8 k / w 0 . 0 5 k / w 0 . 0 3 k / w r = 0 . 0 1 k / w - d e l t a r t h s a 0 200 400 600 800 1000 1200 1400 1600 0 100200300400500 total output current (a) maximum total power loss (w) 120 (rect) 3 x vsk.170.. series three phase bridge connected t j = 130c 60 70 80 90 100 110 120 130 0 50 100 150 200 250 3 00 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction angle vsk.250.. series r thjc (dc) = 0.125 k/w 60 70 80 90 100 110 120 130 01002003004005 00 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction period vsk.250.. series r thjc (dc) = 0.125 k/w 0 50 100 150 200 250 300 350 050100150200250 rms limit conduction angle maximum average on-state power loss (w ) average on-state current (a) 180 120 90 60 30 vsk.250.. series per junction t = 130c j 0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 4 00 dc 180 120 90 60 30 rms limit conduction period maximum average on-state power loss (w ) average on-state current (a) vsk.250.. series per junction t j = 130c
document number: 94417 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 02-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 7 vsk.170pbf, vsk.250pbf series scr/scr and scr/diode (magn-a-pak power modules), 170 a/250 a vishay semiconductors fig. 14 - maximum non-repetitive surge current fig. 15 - maximum non-repetitive surge current fig. 16 - on-state po wer loss characteristics fig. 17 - on-state po wer loss characteristics 3500 4000 4500 5000 5500 6000 6500 7000 7500 11010 0 number of equal amplitude half cycle current pulses (n) peak half sine wave on-state current (a) vsk.250.. series per junction at any rated load condition and with rated v rrm applied following surge. initial t = 130c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j 3000 4000 5000 6000 7000 8000 9000 0.01 0.1 1 peak half sine wave on-state current (a) pulse train duration (s) maximum non repetitive surge curren t versus pulse train duration. control of conduction may not be maintained . vsk.250.. series per junction initial t j = 130c no voltage reapplied rated v rrm reapplied 020406080100120 maximum allowable ambient temperature (c) 0 . 3 k / w 0 . 2 5 k / w 0 . 2 0 k / w 0 . 1 6 k / w 0 . 1 2 k / w 0 . 0 8 k / w 0 . 0 5 k / w r = 0 . 0 2 k / w - d e l t a r t h s a 0 100 200 300 400 500 600 700 0 100 200 300 400 500 600 180 120 90 60 30 maximum total on-state power loss (w) conduction angle total rms output current (a) vsk.250.. series per module t j = 130c 0 20406080100120 maximum allowable ambient temperature (c) r = 0 . 0 1 k / w - d e l t a r t h s a 0.02 k / w 0 . 0 3 k / w 0 . 0 4 k / w 0 . 0 5 k / w 0 . 0 6 k / w 0 . 1 k / w 0 . 1 2 k / w 0 . 1 6 k / w 0 . 3 k / w 0 200 400 600 800 1000 1200 1400 0 100 200 300 400 500 maximum total power loss (w) total output current (a) 180 (sine) 180 (rect) 2 x vsk.250.. series single phase bridge connected t j = 130c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94417 8 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 02-jul-10 vsk.170pbf, vsk.250pbf series vishay semiconductors scr/scr and scr/diode (magn-a-pak power modules), 170 a/250 a fig. 18 - on-state powe r loss characteristics fig. 19 - on-state voltage drop characteristics fig. 20 - on-state voltage drop characteristics fig. 21 - reverse recovery charge characteristics fig. 22 - reverse recovery charge characteristics 0 20406080100120 maximum allowable ambient temperature (c) r = 0 . 0 1 k / w - d e l t a r 0 . 0 3 k / w 0 . 0 4 k / w 0 . 0 5 k / w 0 . 0 6 k / w 0 . 0 8 k / w 0 . 1 k / w 0 . 1 2 k / w 0 . 1 6 k / w 0 . 2 0 k / w 0 . 2 5 k / w t h s a 0 200 400 600 800 1000 1200 1400 1600 1800 2000 0 100 200 300 400 500 600 700 maximum total power loss (w) total output current (a) 120 (rect) 3 x vsk.250.. series three phase bridge connected t j = 130c 0.511.522.533.544.55 100 1000 10000 instantaneous forward current (v) instantaneous forward voltage (v) tj = 25c tj = 130c vsk.170 series per junction 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 100 1000 10000 instantaneous forward current (v) instantaneous forward voltage (v) tj = 25c tj = 130c vsk.250 series per junction 200 400 600 800 1000 1200 1400 1600 1800 0 102030405060708090100 rate of fall of on-state current - di/dt (a/s) typical reverse recovery charge - qrr (c) i tm = 800 a 500 a 300 a 200 a 100 a vsk.170.. series t j = 130 c per junction 50 a 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 0 1020304050607080901 00 typical reverse recovery charge - qrr (c) rate of fall of on-state current - di/dt (a/s) 500 a 300 a 200 a 100 a t = 130 c per junction j i tm = 800 a 50 a vsk.250.. series t j = 130 c per junction
document number: 94417 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 02-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 9 vsk.170pbf, vsk.250pbf series scr/scr and scr/diode (magn-a-pak power modules), 170 a/250 a vishay semiconductors fig. 23 - gate characteristics fig. 24 - thermal impedance z thjc characteristics ordering information table note ? to order the optional hardware go to www.vishay.com/doc?95172 0.1 1 10 100 0.001 0.01 0.1 1 10 1 00 vgd igd (b) (a) tj=25 c tj=125 c tj=-40 c (2) (3) instantaneous gate current (a) instantaneous gate voltage (v) a) recommended load line for b) recommended load line for rated di/dt : 20 v, 10 ohms; tr < =1s tr<=1 s rectangular gate pulse <=30% rated di/dt : 10v, 20ohms (1) pgm = 10w, tp = 4ms (2) pgm = 20w, tp = 2ms (3) pgm = 40w, tp = 1ms (4) pgm = 60w, tp = 0.66ms vsk.170/250 series frequency limited by pg(av) (1) (4) 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 100 square wave pulse duration (s) thjc vsk.170.. series steady state value: r = 0.17 k/w r = 0.125 k/w (dc operation) thjc thjc transient thermal impedance z (k/w) vsk.250.. series 1 - module type 2 - circuit configuration (see dimensions - link at the end of datasheet) 3 - current rating 4 - voltage code x 100 = v rrm (see voltage ratings table) device code 5 13 24 vsk t 250 - 20 pbf 5 - none = standard production pbf = lead (pb)-free
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94417 10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 02-jul-10 vsk.170pbf, vsk.250pbf series vishay semiconductors scr/scr and scr/diode (magn-a-pak power modules), 170 a/250 a circuit configuration links to related documents dimensions www.vishay.com/doc?95086 vskl... vsku... vskv... vskh... vskt... available from 400 v to 1600 v for vsk.170pbf series, available from 400 v to 2000 v for vsk.250pbf series available up to 1200 v, contact factory for different requirement + - ~ ~ + - k1 g1 g2 k2 + - ~ ~ + - k1 g1 + - ~ ~ + - - - + + - - k1 g1 g2 k2 + + - - + + k1 g1 g2 k2
document number: 95086 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 03-aug-07 1 magn-a-pak outline dimensions vishay semiconductors dimensions in millimeters (inches) notes ? dimensions are nominal ? full engineering drawings are available on request ? ul identification number for ga te and cathode wire: ul 1385 ? ul identification number for package: ul 94 v-0 ? 5.5 6 (0.24) 38 (1.5) 50 (1.97) 6 (0.24) 115 (4.53) 80 (3.15) 9 (0.35) 20 (0.79) 3 screws m8 x 1.25 35 (1.38) 28 (1.12) 32 (1.26) hex 13 10 (0.39) 92 (3.62) 51 (2.01) 52 (2.04)
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.

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